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Treating Surfaces with a Cold Atmospheric Pressure Plasma using the COST-Jet

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Damage-Free Plasma Source for Atomic-Scale Processing.

Junyoung Park¹, Jiwon Jung¹, Min-Seok Kim¹

¹Department of Electrical Engineering, Hanyang University, Seoul 04763, South Korea.

|September 6, 2024

Summary

New ultralow electron temperature (ULET) plasma enables damage-free atomic-scale processing for next-generation semiconductor manufacturing. This breakthrough is crucial for sub-5 nm devices requiring precise control and minimal plasma-induced damage.

Keywords:

Atomic-scale processing Damage-free Etching Grid system Plasma Ultralow electron temperature

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Last Updated: Jun 14, 2025

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Area of Science:

Materials Science
Plasma Physics
Semiconductor Manufacturing

Background:

Sub-5 nm semiconductor manufacturing demands atomic-scale etching and deposition.
Conventional plasma technology faces limitations in critical dimension control and damage.
Precise control and layer selectivity are essential for advanced logic and memory devices.

Purpose of the Study:

To introduce and evaluate an ultralow electron temperature (ULET) plasma source.
To demonstrate damage-free processing capabilities at the atomic scale.
To overcome limitations of conventional plasma technologies for sub-5 nm node fabrication.

Main Methods:

Application of a novel plasma source with very low electron temperature (T_e < 0.5 eV).
Characterization of ion energy distribution, showing low ion energies and narrow distribution.
Verification of damage-free processing by exposing 2D structural materials.

Main Results:

ULET plasma demonstrated suppressed physical, charging, and radiation damage.
Low ion energies and narrow ion energy distribution confirmed in ULET plasma.
Absence of physical damage validated through experimental exposure of 2D materials.

Conclusions:

ULET plasma is a viable solution for damage-free atomic-scale processing.
This technology addresses critical challenges in sub-5 nm semiconductor manufacturing.
ULET plasma offers a pathway to achieve precise critical dimension control with high selectivity.