Ultralow voltage-driven efficient and stable perovskite light-emitting diodes.

Area of Science:

• Materials Science
• Optoelectronics
• Solid-State Physics

Background:

• Perovskite light-emitting diodes (PeLEDs) suffer from poor operational stability, hindering commercialization.
• High brightness and quantum efficiency at low driving voltages are crucial for extending PeLED operational lifetime by reducing heat.
• Interface recombination and charge transport issues significantly impact PeLED performance and stability.

Purpose of the Study:

• To achieve a breakthrough in PeLED operational stability by reducing driving voltage.
• To enhance PeLED brightness and quantum efficiency while minimizing heat accumulation.
• To develop strategies for suppressing interface recombination and improving charge transport in PeLEDs.

Main Methods:

• Engineered PeLEDs with an emission peak at 515 nm.
• Focused on suppressing interface recombination.
• Ensured excellent charge transport properties.

Main Results:

• Achieved a record-low turn-on voltage of 1.7 volts (approximately 70% of bandgap voltage).
• Attained a maximum brightness of 90,295 cd/m² and a peak external quantum efficiency of 27.8%.
• Demonstrated a substantially extended operational lifetime of 7691.1 hours with negligible Joule heat at low driving voltages.

Conclusions:

• Optimized strategies effectively address PeLED stability issues through thermal management.
• The developed PeLEDs exhibit high brightness, efficiency, and an ultralow driving voltage.
• This work paves the way for highly stable and commercially viable PeLEDs.