Structural and Electronic Response of Multigap N-Doped In₂Se₃: A Prototypical Material for Broad Spectral Optical...

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Controlled doping in 2D semiconductors is crucial for technological integration.
• Multiphase compounds present synthesis and stability challenges.
• Indium Selenide (In2Se3) offers potential for tunable electronic properties.

Purpose of the Study:

• To demonstrate controlled doping in a multiphase In2Se3 system.
• To investigate the electronic properties of distinct In2Se3 crystallographic phases.
• To explore the potential applications of In2Se3 in optical devices and flexible electronics.

Main Methods:

• Synthesis of multiphase In2Se3 with rhombohedral (α, β) and trigonal (δ) structures.
• Scanning tunneling spectroscopy (STS) to analyze local electronic density of states.
• Characterization of chemical stability and n-type doping behavior.

Main Results:

• Successfully synthesized multiphase In2Se3 with distinct crystallographic structures.
• Demonstrated chemical stability and well-behaved n-type doping.
• Observed variations in electronic bandgaps (infrared to visible light) across different phases.

Conclusions:

• The multiphase In2Se3 system exhibits tunable electronic properties through structural phase control.
• In2Se3 is a promising material for multigap optical devices, detectors, and solar cells.
• Structural phase manipulation facilitates integration into flexible electronics and heterostructures.