Enhancing Detection Frequency and Reducing Noise Through Continuous Structures via Release-Controlled Transfer Toward...

Organic photodetectors (OPDs) have received considerable attention owing to their superior absorption coefficient and tunable bandgap. The introduction of bulk-heterojunction (BHJ) structure aims to maximize charge generation, however, its response speed is constrained by the random distribution of donor and acceptor. Herein, a multiple-active layer design consisting of a single acceptor layer and a bulk-heterojunction layer (A/BHJ structure) is introduced, which combines the benefits of both the planar junction and the BHJ, improving photo-sensing. A transfer process is employed for this structure, which involves calculating the energy release rate at each interface, considering temperature and velocity. Consequently, the OPD with the A/BHJ structure is successfully fabricated through transfer printing, resulting in reduced dark current, superior detectivity (1.06 × 10¹³ Jones), and rapid response, achieved by creating a high hole injection barrier and suppressing trap sites within the interfaces. By thoroughly investigating charge dynamics in the structure, the A/BHJ structure-based OPD attains large bandwidth detection with high signal-to-noise. An efficient wireless data communication system with digital-to-analog conversion is showcased using the A/BHJ structure-based OPD.