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Highly Tunable Interlayer Coupling and Electronic Structures of Few-Layer Graphene with Pressure.
Lei Mu1, Qiaoxia Xing1, Yanlin Mou1
1State Key Laboratory of Surface Physics, Key Laboratory of Micro- and Nano-Photonic Structures (Ministry of Education), Shanghai Key Laboratory of Metasurfaces for Light Manipulation and Department of Physics, Fudan University, Shanghai 200433, China.
Applying moderate pressure significantly enhances interlayer electronic coupling in few-layer graphene. This study quantifies the increase in the interlayer transfer integral (hopping parameter) with applied pressure.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Solid-State Physics
Background:
- Interlayer electronic coupling dictates the electronic properties of multi-layered graphene systems.
- Understanding this coupling is crucial for tuning electronic structure and phenomena like moiré potentials.
Purpose of the Study:
- To investigate the effect of external pressure on interlayer electronic coupling in few-layer graphene.
- To quantify the pressure-induced changes in the interlayer transfer integral (hopping parameter).
Main Methods:
- Infrared spectroscopy was used to observe resonance peak shifts in 2-10 layer graphene under pressure.
- A model based on the Morse potential was employed to correlate pressure with the transfer integral.
Main Results:
- A moderate pressure of approximately 3.5 GPa resulted in an almost 40% increase in the interlayer transfer integral.
- The resonance peak shift in infrared spectra directly indicated enhanced electronic coupling.
Conclusions:
- External pressure is an effective means to tune the electronic coupling in few-layer graphene.
- The established relationship between pressure and the transfer integral offers fundamental insights into interlayer interactions.
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