Inserting colloidal quantum dots into GaN mesa-array subsurface porous structures through electrochemical etching for
Shaobo Yang1, Chun-Jui Chu1, Zong-Han Li1
1Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, No. 1, Section 4 Roosevelt Road, Taipei 10617, Taiwan.
Abstract:
High-efficiency photon color conversion is an approach of great potential for implementing color display. Inspired by the observation of emission enhancement in a nanoscale cavity, a novel technique to fabricate an array of color converter by mixing colloidal quantum dots (QDs) with the electrolyte of an electrochemical etching (ECE) process is demonstrated. In this process, QDs flow with the electrolyte into the etched subsurface nanoscale porous structure (PS) and settle inside. Since the PS formation and hence QD insertion are controlled by the flow path of the applied electric current in the ECE process, this technique can be used for fabricating any graphic pattern. The nanostructure of such a QD-inserted mesa is examined to confirm QD insertion. Although only single-color mesa arrays are demonstrated in this paper, this technique can be used for fabricating a multiple-color mesa array if a QD or a light-emitting nanoparticle of higher thermal stability is available.
