Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Capacitor With A Dielectric01:18

Capacitor With A Dielectric

4.3K
Parallel plate capacitors consist of two conducting plates separated by a certain distance. However, it is mechanically difficult to hold the large plates parallel to each other without actual contact. Hence, a dielectric layer is commonly placed between the plates, which provides an easy solution for holding the plates together with a small gap and increases the capacitance of the capacitor.
Dielectrics are non-conducting materials with no free or loosely bound electrons. When a dielectric is...
4.3K
Semiconductors01:22

Semiconductors

1.8K
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
1.8K
Types of Semiconductors01:20

Types of Semiconductors

1.8K
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
1.8K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.4K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.4K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Hepatic Bmal1 alleviates cholestasis in female mice through direct regulation of SULT2A1.

Biochemical pharmacology·2026
Same author

Incoherent Input as a Key Strategy for Robust Time-Dependent Biphasic Dynamics.

ACS synthetic biology·2026
Same author

Author Correction: An atlas of genetic effects on cellular composition of the tumor microenvironment.

Nature immunology·2026
Same author

Simulation-based outbreak training and large language models in infection prevention and control education.

American journal of infection control·2026
Same author

Overcoming Raoult's Law via Ligand Field Polarization-Mediated Interfacial Water Activation for High-Performance Solar Evaporation.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Freezing-Induced Spatial Confinement During Cryo-Polymerization Enables Stable Intrinsic Luminescence in Hydrogels.

Angewandte Chemie (International ed. in English)·2026

Related Experiment Video

Updated: May 2, 2026

Fabrication Process of Silicone-based Dielectric Elastomer Actuators
10:32

Fabrication Process of Silicone-based Dielectric Elastomer Actuators

Published on: February 1, 2016

33.6K

Insulating electromagnetic-shielding silicone compound enables direct potting electronics.

Xinfeng Zhou1, Peng Min1, Yue Liu1

  • 1State Key Laboratory of Organic-Inorganic Composites, College of Materials Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, China.

Science (New York, N.Y.)
|September 12, 2024
PubMed
Summary

This study introduces novel insulating polymer composites for electromagnetic interference shielding. These materials offer high resistivity and shielding performance, preventing short circuits in electronics.

More Related Videos

Application of a Coupling Agent to Improve the Dielectric Properties of Polymer-Based Nanocomposites
06:34

Application of a Coupling Agent to Improve the Dielectric Properties of Polymer-Based Nanocomposites

Published on: September 19, 2020

5.8K
Metal-Assisted Electrochemical Nanoimprinting of Porous and Solid Silicon Wafers
09:18

Metal-Assisted Electrochemical Nanoimprinting of Porous and Solid Silicon Wafers

Published on: February 8, 2022

4.0K

Related Experiment Videos

Last Updated: May 2, 2026

Fabrication Process of Silicone-based Dielectric Elastomer Actuators
10:32

Fabrication Process of Silicone-based Dielectric Elastomer Actuators

Published on: February 1, 2016

33.6K
Application of a Coupling Agent to Improve the Dielectric Properties of Polymer-Based Nanocomposites
06:34

Application of a Coupling Agent to Improve the Dielectric Properties of Polymer-Based Nanocomposites

Published on: September 19, 2020

5.8K
Metal-Assisted Electrochemical Nanoimprinting of Porous and Solid Silicon Wafers
09:18

Metal-Assisted Electrochemical Nanoimprinting of Porous and Solid Silicon Wafers

Published on: February 8, 2022

4.0K

Area of Science:

  • Materials Science
  • Electrical Engineering
  • Polymer Science

Background:

  • Traditional electromagnetic interference (EMI) shielding materials are electrically conductive, risking short circuits in integrated electronics.
  • Developing insulating EMI shielding materials is crucial for advanced electronic applications.

Purpose of the Study:

  • To develop novel insulating polymer composites for effective EMI shielding.
  • To overcome the short-circuit risks associated with conventional conductive shielding materials.

Main Methods:

  • Proposed a microcapacitor-structure model using conductive fillers as polar plates and a polymer dielectric layer.
  • Achieved synergistic nonpercolation densification and dielectric enhancement.
  • Investigated electron oscillation and dipole polarization for electromagnetic wave interaction.

Main Results:

  • Developed insulating polymer composites with high electrical resistivity.
  • Demonstrated effective electromagnetic interference shielding performance.
  • Achieved combined high thermal conductivity and insulating properties.

Conclusions:

  • The novel microcapacitor-structure composites provide effective and safe EMI shielding for electronics.
  • The insulating nature allows direct integration into electronic assemblies, addressing electromagnetic compatibility and heat issues.