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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
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Interlayer Exciton-Phonon Coupling in MoSe2/WSe2 Heterostructures.

Oisín Garrity1, Thomas Brumme2, Annika Bergmann3

  • 1Department of Physics, Freie Universität Berlin, Arnimallee 14, D-14195 Berlin, Germany.

Nano Letters
|September 12, 2024
PubMed
Summary

We observed interlayer coupling between molybdenum diselenide (MoSe2) phonons and tungsten diselenide (WSe2) excitons in WSe2/MoSe2 heterostructures. This cross-material interaction is crucial for understanding van der Waals heterostructure vibrational properties.

Keywords:
DFTRamanTMDCexciton−phononheterostructures

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Transition metal dichalcogenide heterostructures exhibit strong excitonic properties and light-matter interactions, essential for advanced device engineering.
  • Two-dimensional heterostructures possess unique interlayer processes influencing their electronic and optical characteristics.

Purpose of the Study:

  • To demonstrate and investigate the interlayer coupling of phonons and excitons in a WSe2/MoSe2 heterostructure.
  • To understand the influence of interlayer coupling on the vibrational properties of van der Waals heterostructures.

Main Methods:

  • Utilized resonant Raman scattering to probe interlayer coupling.
  • Performed frozen-phonon calculations within density functional theory (DFT).

Main Results:

  • Demonstrated interlayer coupling of MoSe2 phonons to WSe2 excitons in WSe2/MoSe2 heterostructures.
  • Observed interlayer resonance in the Raman cross-section of MoSe2 A1g phonons induced by the WSe2 monolayer.
  • DFT calculations revealed strong deformation-potential coupling between MoSe2 phonons and WSe2 electronic states, reaching 20% of intralayer coupling.

Conclusions:

  • Interlayer coupling significantly influences the vibrational properties of van der Waals heterostructures.
  • Cross-material interactions must be considered beyond the properties of individual constituent layers.