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Codoped germanene with 3p and 4p elements elements
Pablo A Denis1, Jose A S Laranjeira2, Nicolas F Martins
1Computational Nanotechnology, DETEMA, Facultad de Química, UDELAR, CC 1157, 11800, Montevideo, Uruguay. pablod@fq.edu.uy.
Codoping germanene with specific 3p and 4p elements, such as AlP and GaAs, leads to preferred dopant arrangements. This controlled doping creates novel germanene materials with tunable electronic properties for advanced electronic devices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Computational Chemistry
Background:
- The demand for advanced electronic materials drives research into two-dimensional (2D) materials like germanene.
- Heteroatom doping is a strategy to tune germanene's electronic properties, but achieving reproducible dopant arrangements is challenging.
- Codoping offers a potential solution to control dopant placement and understand their behavior in germanene.
Purpose of the Study:
- To investigate the dopant arrangement preferences in codoped germanene systems.
- To explore the electronic properties of germanene codoped with specific 3p and 4p elements.
- To assess the suitability of these codoped materials for electronic applications.
Main Methods:
- First-principles calculations were employed to study 21 codoped germanene systems.
- Calculations utilized M06-L and HSE06 methods with 6-31G* basis sets under periodic boundary conditions.
- B3LYP-D3 periodic calculations were also performed using CRYSTAL17 for comprehensive analysis.
Main Results:
- Specific codoped germanene systems, including AlP, AlS, GaP, GaS, GaAs, and GaSe, exhibit a tendency for dopants to occupy defined lattice positions.
- The 'ortho' disposition of dopants was found to be preferred in AlP, AlS, GaP, GaS, GaAs, and GaSe codoped germanene.
- These codoped materials display unique electronic properties suitable for developing new germanene-based electronic components.
Conclusions:
- Codoping provides a viable method to control dopant arrangement in germanene, overcoming challenges in single-dopant placement.
- The identified codoped germanene systems with preferred dopant arrangements show promise for next-generation electronic materials.
- Further research into these materials could accelerate the development of advanced electronic devices.
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