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Polarization-dependent gain in bismuth-doped phospho- and germanosilicate fiber amplifiers
Optics Letters
|September 13, 2024
Summary
Polarization-dependent gain (PDG) in bismuth-doped fiber amplifiers (BDFAs) was investigated. Germanosilicate core fibers showed a more pronounced PDG effect, offering insights for optimizing BDFA performance.
Area of Science:
- Optical Fiber Amplifiers
- Photonics
- Materials Science
Background:
- Bismuth-doped fiber amplifiers (BDFAs) are crucial for optical amplification.
- Understanding polarization-dependent gain (PDG) is essential for amplifier performance.
- PANDA-type fibers offer unique properties for fiber amplifier development.
Purpose of the Study:
- To investigate the polarization-dependent gain (PDG) effect in bismuth-doped fiber amplifiers (BDFAs).
- To compare PDG in BDFAs using phospho- and germanosilicate core fibers.
- To correlate experimental PDG results with simulation models based on bismuth active centers (BACs) anisotropy.
Main Methods:
- Experimental study of PDG in core-pumped BDFAs utilizing PANDA-type phospho- and germanosilicate fibers.
- Measurement of gain difference between orthogonal signal polarizations.
- Development and application of a simulation model based on the anisotropy parameter of BACs, derived from luminescence polarization.
Main Results:
- PDG values in the range of 2.5-3 dB were observed for BDFAs with over 20 dB total gain.
- The PDG effect was found to be more pronounced in BDFAs employing germanosilicate fibers compared to phosphosilicate fibers.
- Experimental results closely matched simulation data, validating the model's accuracy in predicting PDG based on BACs anisotropy (9-12% for Si, 18-22% for P).
Conclusions:
- The study quantifies PDG in BDFAs, highlighting its dependence on core fiber material.
- Germanosilicate core fibers exhibit a stronger PDG effect, suggesting specific applications or design considerations.
- The findings provide valuable data for optimizing BDFA performance and understanding the structural properties of bismuth active centers.
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