Highly sensitive full solar-blind ultraviolet spectrum detection and imaging based on PdSe₂/Ga₂O₃ vdW heterojunction

Solar-blind ultraviolet (UV) photodetectors are in great demand for both military and civilian applications. Here, we have successfully demonstrated the synthesis of the Sn-doped Ga₂O₃ films with controllable bandgaps to construct PdSe₂/Ga₂O₃ van der Waals (vdW) heterojunctions achieving highly sensitive full solar-blind UV spectrum detection. The assembled device demonstrates a full solar-blind UV spectral self-powered response, with a large responsivity of 123.5 mA/W, a high specific detectivity of 1.63 × 10¹³ Jones, and a rapid response time of 0.15/2.3 ms. Importantly, an outstanding solar-blind UV imaging application based on an integrated PdSe₂/Ga₂O₃ device array has been demonstrated. Our work paves a feasible path toward achieving highly sensitive solar-blind UV detecting and imaging based on wide-bandgap Ga₂O₃ films.