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Updated: Jun 13, 2025

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
Robust Magnetic-Field-Free Perpendicular Magnetization Switching by Manipulating Spin Polarization Direction in
Yibo Fan1, Qian Wang1, Wei Wang1
1School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
Abstract:
Perpendicular magnetization switching by a magnetic-field-free, energy-efficient electrical approach has remained a great challenge. Here, we demonstrate the realization of robust magnetic-field-free perpendicular magnetization switching in the (101)RuO2/[Pt/Co/Pt] heterojunction by manipulating the spin polarization direction. We proposed that the relative strength of out-of-plane spin currents with out-of-plane spin polarization σ and in-plane spin polarization σ can be effectively manipulated by tuning the nominal thickness of [Pt/Co/Pt] multilayers and the direction of applied electric current with respect to the RuO2 crystal orientation. When the electric current is applied along RuO2 [010] direction and the net spin current with spin polarization σ is canceled out, the "robust" perpendicular magnetization switching driven by pure σ is achieved in (101)RuO2/[Pt/Co/Pt], where the term "robust" means that the switching polarity (counterclockwise) does not change and the switching ratio reduces very slowly with increasing magnitude of in-plane magnetic field H and/or H in a wide range of ±500 Oe. Our findings provide a technique to effectively manipulate the spin currents, which is beneficial for the investigation of antiferromagnetic spintronic devices with high magnetic field stability and reliable magnetization switching.
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