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Updated: Jun 12, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Tunable Valley Pseudospin and Electron-Phonon Coupling in WSe2/1T-VSe2 Heterostructures
Xing Xie1,2, Shaofei Li1, Junying Chen1,2
1Institute of Quantum Physics, School of Physics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China.
Abstract:
Heterostructure engineering provides versatile platforms for exploring exotic physics and enhancing the device performance through interface coupling. Despite the rich array of physical phenomena presented by heterostructures composed of semiconductor and metal van der Waals materials, significant gaps remain in understanding their optical, thermal, and electronic properties. Here, we demonstrate that the valley pseudospin and electron-phonon coupling in monolayer WSe2 are significantly influenced by interface coupling with 1T-VSe2. The heterointerface alters the relaxation process of valley excitons, leading to a transition in magnetic-field-dependent valley polarization from a linear to a "V" shape. Furthermore, we uncover that enhanced electron-phonon coupling exacerbates variations in exciton and valley exciton behavior with temperature, involving higher phonon energies and a shift from acoustic to optical phonons. These findings highlight a promising pathway to manipulate valley excitons and investigate electron-phonon coupling through van der Waals interface interactions.
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