Related Experiment Video
Updated: Jul 11, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Screening of Polar Electron-Phonon Interactions near the Surface of the Rashba Semiconductor BiTeCl
J Qu1,2, E F Cuddy1,3, X Han1,2
1Stanford Institute for Materials and Energy Sciences, <a href="https://ror.org/05gzmn429">SLAC National Accelerator Laboratory</a>, 2575 Sand Hill Road, Menlo Park, California 94025, USA.
Abstract:
Understanding electron-phonon coupling in noncentrosymmetric materials is critical for controlling the internal fields which give rise to Rashba interactions. We apply time- and angle-resolved photoemission spectroscopy (trARPES) to study coherent phonons in the surface and bulk regions of the polar semiconductor BiTeCl. Aided by ab initio calculations, our measurements reveal the coupling of out-of-plane A_{1} modes and an in-plane E_{2} mode. By considering how these modes modulate the electric dipole moment in each unit cell, we show that the polar A_{1} modes are more effectively screened in the metallic surface region, while the nonpolar E_{2} mode couples in both regions. In addition to informing strategies to optically manipulate Rashba interactions, this Letter has broader implications for the behavior of electron-phonon coupling in systems characterized by inhomogeneous dielectric environments.
More Related Videos
09:00Experimental Methods for Spin- and Angle-Resolved Photoemission Spectroscopy Combined with Polarization-Variable Laser
Published on: June 28, 2018
04:22Author Spotlight: Advancements in High-Performance Thermoelectric Thin Films Through Radio Frequency Magnetron Sputtering
Published on: May 17, 2024
Related Concept Videos
π Electron Effects on Chemical Shift: Overview
Electrostatic Boundary Conditions in Dielectrics
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's permittivity.
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Schottky Barrier Diode