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Towards MnN as a replacement for IrMn.
William Frost1, Fatimah Alsaud2, Robert A Lawrence2
1School of Physics, Engineering and Technology, University of York, Heslington, YO10 5DD, UK. william.frost@york.ac.uk.
Researchers developed a new antiferromagnetic material using a tungsten seed layer, overcoming limitations of previous alternatives to iridium-manganese alloys. This advancement offers a promising, cost-effective solution for high-temperature applications.
Area of Science:
- Materials Science
- Solid State Physics
- Spintronics
Background:
- There is a critical need for alternatives to iridium-manganese (IrMn) alloys in antiferromagnetic spintronic devices due to iridium's cost and scarcity.
- Manganese nitride (MnN) on a tantalum (Ta) seed layer has been explored as a potential replacement, but faces challenges with low anisotropy and nitrogen diffusion.
Purpose of the Study:
- To address the limitations of MnN/Ta for high-temperature antiferromagnetic applications.
- To investigate the use of a tungsten (W) seed layer to improve MnN properties and performance.
Main Methods:
- Fabrication of MnN thin films using a W seed layer instead of Ta.
- Characterization of structural properties, including crystallographic texture ({111} growth).
- Measurement of magnetic properties, specifically magnetocrystalline anisotropy.
Main Results:
- Minimized nitrogen diffusion into the W seed layer at elevated temperatures (exceeding 500°C).
- Achieved preferential {111} crystallographic growth of MnN.
- Measured significantly enhanced magnetocrystalline anisotropy (), comparable to IrMn.
Conclusions:
- The use of a W seed layer effectively suppresses nitrogen diffusion and enhances the anisotropy of MnN films.
- This approach presents a viable pathway to develop cost-effective, high-performance antiferromagnetic materials for room-temperature and above applications, replacing expensive IrMn alloys.

