Ferrovalleytricity in a two-dimensional antiferromagnetic lattice

Area of Science:

• Condensed Matter Physics
• Materials Science
• Spintronics

Background:

• Valleytronics aims to control electron valley degrees of freedom for advanced electronic devices.
• Current research on ferrovalleytricity is limited to two-dimensional ferromagnetic systems.
• Antiferromagnetic materials remain largely unexplored for valley physics manipulation.

Purpose of the Study:

• To propose a general mechanism for realizing ferrovalleytricity in antiferromagnetic lattices.
• To achieve spin control over valley physics in antiferromagnetic systems.
• To explore potential applications of valley physics in antiferromagnets.

Main Methods:

• Symmetry analysis and k·p modeling to understand the underlying physics.
• First-principles calculations to confirm the proposed mechanism.
• Investigation of a CrBr3-MnPSe3-CrBr3 heterotrilayer as a model system.

Main Results:

• A novel mechanism enabling spin-switchable non-uniform potential in antiferromagnetic lattices via proximity-induced Zeeman fields.
• Demonstration of spin control over the anomalous valley Hall effect in an antiferromagnetic MnPSe3 layer.
• Experimental confirmation of ferrovalleytricity in a CrBr3-MnPSe3-CrBr3 heterostrilayer.

Conclusions:

• The proposed mechanism successfully extends ferrovalleytricity to antiferromagnetic systems.
• Spin control over valley physics is achievable in antiferromagnets, paving the way for new spintronic devices.
• This work highlights the potential of antiferromagnetic materials in advancing valleytronics.