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Updated: Jun 12, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Dual-Mode Reconfigurable Split-Gate Logic Transistor through Van der Waals Integration
Xue Chen1,2, Haozhe Xue3, Yu Wen3
1Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China.
Abstract:
As silicon-based transistors approach their physical size limitations, two-dimensional material-based reconfigurable functional electronic devices are considered the most promising novel device architectures beyond Moore strategies. While these devices have garnered significant attention, they often require complex device fabrication processes and extra electric fields. Additionally, the device performance is usually limited by the metal-semiconductor interface properties. In this Letter, we have constructed a reconfigurable logic device based on a WSe2 transistor with a nanofloating gate and split-gates through van der Waals integration. This device achieves a small Schottky barrier height due to the van der Waals contacts. By varying the split-gate biases, we can realize volatile reconfigurable homojunctions as well as AND, OR, NOR, and NAND logic operations with just a single device. Furthermore, with the charge trapping effect of nanofloating gate, we can also achieve nonvolatile reconfigurable homojunctions, as well as AND and OR logic operations. The volatile and nonvolatile logic operations are similar to the short-term plasticity and long-term plasticity, respectively, of synapses in the human brain. This work offers a potential approach for creating novel reconfigurable functional electronic devices with a simple fabrication process and low cost.
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