Dual-Mode Semiconductor Device Enabling Optoelectronic Detection and Neuromorphic Processing with Extended Spectral...

Area of Science:

• Semiconductor Physics
• Materials Science
• Nanotechnology

Background:

• Miniaturization and integration of advanced technologies require high-performance semiconductor devices.
• Achieving dual functionality in a single device presents significant challenges.

Purpose of the Study:

• To report a high-performance, dual-mode semiconductor device.
• To demonstrate simultaneous optoelectronic detection and neuromorphic operation within a single device.

Main Methods:

• Integration of an ultra-thin aluminum oxide (Al2O3) passivation layer with a lead sulfide (PbS)/silicon (Si) hybrid heterojunction.
• Characterization of device performance in optoelectronic detection mode (spectral response, image quality).
• Evaluation of device performance in neuromorphic operation mode (persistent photoconductivity, digit classification accuracy).

Main Results:

• The device exhibits an ultra-wide spectral response from 265 nm to 1650 nm in optoelectronic mode.
• High-quality image reproduction (256x256 pixels) with a low Q-value (0.00437 µW cm⁻² at 8.58 µW cm⁻²).
• Achieved 96.5% accuracy in digit classification, demonstrating efficacy in temporal information processing via persistent photoconductivity.

Conclusions:

• The developed dual-function device successfully integrates optoelectronic and neuromorphic capabilities.
• This work potentially advances multifunctionality and miniaturization of chips for intelligence applications.
• The device design offers a promising pathway for next-generation integrated circuits.