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Spontaneous Heterointerface Modulation by a Methylammonium Tetrafluoroborate Additive for a Narrow-Bandgap FAPbI3
Daisuke Kubota1,2, Ryuzi Katoh3, Hiroyuki Kanda1
1National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan.
ACS Applied Materials & Interfaces
|September 25, 2024
Summary
Methylammonium tetrafluoroborate (MABF4) enhances perovskite solar cell (PSC) performance by improving interfaces, not bulk material. This additive suppresses defects and eliminates carrier traps at heterointerfaces for better photovoltaic efficiency.
Area of Science:
- Materials Science
- Renewable Energy
- Photovoltaics
Background:
- Perovskite solar cells (PSCs) show improved performance with perovskite photoabsorbers.
- Formamidinium-lead-iodide (FAPbI3) is a narrow-bandgap absorber crucial for n-i-p PSCs.
- Modulating FAPbI3 properties while maintaining its narrow bandgap is key for PSC advancement.
Purpose of the Study:
- To investigate methylammonium tetrafluoroborate (MABF4) as an additive for narrow-bandgap FAPbI3 photoabsorbers.
- To enhance photovoltaic (PV) performance in PSCs by addressing interface properties.
- To understand the mechanism of MABF4's effect on FAPbI3 heterointerfaces.
Main Methods:
- Utilized methylammonium tetrafluoroborate (MABF4) as an additive in FAPbI3 photoabsorbers.
- Analyzed the modulation of heterointerfaces between FAPbI3 and carrier-transport materials (hole-transport and TiO2 electron-transport).
- Employed time-resolved microwave conductivity measurements to assess carrier traps and mobility ratios.
Main Results:
- MABF4 addition improved PV performance primarily by modulating heterointerfaces, not bulk FAPbI3 quality.
- MABF4 effectively eliminated surface defects at the hole-transport material/FAPbI3 interface.
- BF4-derived species segregated at the FAPbI3/TiO2 interface, modulating it and eliminating carrier traps.
Conclusions:
- MABF4 is a viable additive for narrow-bandgap FAPbI3 photoabsorbers in PSCs.
- The additive functions by suppressing defects and carrier traps at heterointerfaces.
- Findings offer a new strategy for developing advanced FAPbI3-based PSCs.

