Using ground state and excited state density functional theory to decipher 3ddopant defects in GaN

Using ground state density functional theory (DFT) and implementing an occupation-constrained DFT (occ-DFT) for self-consistent excited state calculations, we decipher the electronic structure of the Mn dopant and other 3ddefects in GaN across the band gap. Our analysis, validated with broad agreement with defect levels (ground-state calculations) and photoluminescence data (excited-state calculations), mandates reinterpretation and reassignment of 3ddefect data in GaN. The Mn_Gadefect is determined to span stable charge states from (1-) inn-type GaN through (2+) inp-type GaN. The Mn(2+) is predicted to be ad²ground state spin triplet defect with a singlet excited state, isoelectronic with the defect associated with the 1.19 eV photoluminescence inn-type GaN. The combined analysis of defect levels and excited states invites reassessment of alld²-capable dopants in GaN. We demonstrate that the 1.19 eV defect, a candidate defect for optically controlled quantum applications, cannot be the Cr(1+) assumed in literature and instead must be the V(0). The combined ground-state/excited-state DFT analysis is shown to be able to chemically fingerprint defects.