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P-N junction01:11

P-N junction

484
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
484

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Related Experiment Video

Updated: Jun 12, 2025

Key Factors Affecting the Performance of Sb2S3-sensitized Solar Cells During an Sb2S3 Deposition via SbCl3-thiourea Complex Solution-processing
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Innovative In Situ Passivation Strategy for High-Efficiency Sb2(S,Se)3 Solar Cells.

Yuqi Zhao1, Wentao Xu2, Jing Wen2

  • 1Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China.

Advanced Materials (Deerfield Beach, Fla.)
|September 27, 2024
PubMed
Summary
This summary is machine-generated.

A novel in situ passivation technique using sodium selenosulfate effectively passivates antimony selenosulfide solar cells. This method enhances device performance by reducing defects and improving charge transport, achieving a record 10.81% efficiency.

Keywords:
defectsnon‐radiative recombinationpassivation, Sb2(S, Se)3solar cells

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Area of Science:

  • Materials Science
  • Renewable Energy
  • Semiconductor Physics

Background:

  • Antimony selenosulfide (Sb2(S,Se)3) solar cells require effective defect passivation for improved performance.
  • Defects significantly impact charge transport and extraction efficiency in these devices.

Purpose of the Study:

  • To introduce a novel in situ passivation (ISP) technique for Sb2(S,Se)3 solar cells.
  • To enhance the efficiency and performance of Sb2(S,Se)3 solar cells through defect passivation.

Main Methods:

  • Developed and applied an in situ passivation (ISP) technique incorporating sodium selenosulfate.
  • Utilized first principles calculations and experimental data (SCLC, PL, TAS) to analyze defect passivation and film quality.

Main Results:

  • Achieved a champion power conversion efficiency of 10.81% for Sb2(S,Se)3 solar cells.
  • Demonstrated that sodium selenosulfate acts as an in situ selenization agent, passivating deep-level SbSe defects.
  • Verified reduced non-radiative recombination and improved film quality with fewer traps and defects.

Conclusions:

  • The ISP strategy effectively passivates deep-level defects in Sb2(S,Se)3 films.
  • This method enhances carrier transport and overall device performance, offering a straightforward approach for Sb2(S,Se)3 solar cells.