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Characterization of Trap States in AlGaN/GaN MIS-High-Electron-Mobility Transistors under Semi-on-State Stress

Ye Liang1,2, Jiachen Duan1,2, Ping Zhang2,3

  • 1School of Advanced Technology, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China.

Nanomaterials (Basel, Switzerland)
|September 27, 2024
PubMed

Keywords:
AlGaN/GaN MIS-HEMTcurrent collapseenergy leveltrap densitytrap states

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