Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Metallic Solids02:37

Metallic Solids

18.3K
Metallic solids such as crystals of copper, aluminum, and iron are formed by metal atoms. The structure of metallic crystals is often described as a uniform distribution of atomic nuclei within a “sea” of delocalized electrons. The atoms within such a metallic solid are held together by a unique force known as metallic bonding that gives rise to many useful and varied bulk properties.
All metallic solids exhibit high thermal and electrical conductivity, metallic luster, and malleability....
18.3K
Valence Bond Theory02:42

Valence Bond Theory

8.5K
Coordination compounds and complexes exhibit different colors, geometries, and magnetic behavior, depending on the metal atom/ion and ligands from which they are composed. In an attempt to explain the bonding and structure of coordination complexes, Linus Pauling proposed the valence bond theory, or VBT, using the concepts of hybridization and the overlapping of the atomic orbitals. According to VBT, the central metal atom or ion (Lewis acid) hybridizes to provide empty orbitals of suitable...
8.5K
Properties of Transition Metals02:58

Properties of Transition Metals

25.2K
Transition metals are defined as those elements that have partially filled d orbitals. As shown in Figure 1, the d-block elements in groups 3–12 are transition elements. The f-block elements, also called inner transition metals (the lanthanides and actinides), also meet this criterion because the d orbital is partially occupied before the f orbitals.
25.2K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

High-pressure effects on the electronic properties and photoluminescence of Ag-doped CsCu<sub>2</sub>I<sub>3</sub>.

Physical chemistry chemical physics : PCCP·2024
Same author

Comparison study of supercritical water gasification for hydrogen production on a continuous flow versus a batch reactor.

Bioresource technology·2023
Same author

Passive Internet of Events Enabled by Broadly Compatible Self-Powered Visualized Platform Toward Real-Time Surveillance.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2023
Same author

Slow-light silicon modulator with 110-GHz bandwidth.

Science advances·2023
Same author

Glycerol-weighted chemical exchange saturation transfer nanoprobes allow <sup>19</sup>F<sup>/1</sup>H dual-modality magnetic resonance imaging-guided cancer radiotherapy.

Nature communications·2023
Same author

Pectic oligosaccharides ameliorate high-fat diet-induced obesity and hepatic steatosis in association with modulating gut microbiota in mice.

Food & function·2023

Related Experiment Video

Updated: Jun 11, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.3K

Robust topological insulating property in C2X-functionalized III-V monolayers.

Xianghong Xue1, Zhihua Lin2, Rui Gao2

  • 1School of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048, People's Republic of China.

Nanotechnology
|September 27, 2024
PubMed
Summary

This study explores new two-dimensional topological insulators (TIs) with larger bandgaps for spintronics and quantum computing. Functionalized III-V monolayers show promise for room-temperature applications.

Keywords:
C2X functionalizationIII–V monolayerslarge bandgaprobust topological property

More Related Videos

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
13:58

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

Published on: September 28, 2016

11.7K
Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
06:44

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing

Published on: June 9, 2023

3.1K

Related Experiment Videos

Last Updated: Jun 11, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

12.3K
Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
13:58

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

Published on: September 28, 2016

11.7K
Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
06:44

Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing

Published on: June 9, 2023

3.1K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Quantum Computing

Background:

  • Two-dimensional topological insulators (TIs) possess spin-polarized edge states crucial for spintronics and quantum computing.
  • Limited bandgaps in current TIs hinder their application at room temperature.
  • Developing TIs with larger bandgaps is essential for practical device fabrication.

Purpose of the Study:

  • To investigate novel C2X-functionalized III-V monolayers as potential two-dimensional topological insulators.
  • To explore the tunability of bandgaps and topological properties through chemical functionalization.
  • To identify promising materials for next-generation spintronic and quantum computing devices.

Main Methods:

  • First-principles calculations were employed to systematically study the electronic and topological properties of C2X-functionalized III-V monolayers.
  • Band structures, bandgaps, and topological invariants (Z2) were computed.
  • The influence of spin-orbital coupling (SOC) and biaxial strain on topological properties was analyzed.

Main Results:

  • Several C2X-functionalized III-V monolayers, including GaBi-(C2X)2, InBi-(C2X)2, TlBi-(C2X)2, and TlSb-(C2X)2, exhibit nontrivial bandgaps ranging from 0.223 to 0.807 eV.
  • Topological insulating properties were confirmed, originating from s-px,y band inversion or SOC-induced band splitting.
  • Robust topological characteristics were validated through Z2 invariants and strain tests.
  • Two suitable substrates were identified to facilitate experimental realization.

Conclusions:

  • C2X-functionalized GaBi, InBi, TlBi, and TlSb monolayers represent promising candidates for two-dimensional topological insulators.
  • These materials offer larger bandgaps suitable for room-temperature spintronic applications.
  • The findings pave the way for the experimental fabrication of advanced spintronic devices.