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Updated: Jun 11, 2025

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics
Published on: April 24, 2014
Recent Progresses on Hybrid Lithium Niobate External Cavity Semiconductor Lasers
Min Wang1,2, Zhiwei Fang1,2, Haisu Zhang1,2
1The Extreme Optoelectromechanics Laboratory (XXL), School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China.
Abstract:
Thin film lithium niobate (TFLN) has become a promising material platform for large scale photonic integrated circuits (PICs). As an indispensable component in PICs, on-chip electrically tunable narrow-linewidth lasers have attracted widespread attention in recent years due to their significant applications in high-speed optical communication, coherent detection, precision metrology, laser cooling, coherent transmission systems, light detection and ranging (LiDAR). However, research on electrically driven, high-power, and narrow-linewidth laser sources on TFLN platforms is still in its infancy. This review summarizes the recent progress on the narrow-linewidth compact laser sources boosted by hybrid TFLN/III-V semiconductor integration techniques, which will offer an alternative solution for on-chip high performance lasers for the future TFLN PIC industry and cutting-edge sciences. The review begins with a brief introduction of the current status of compact external cavity semiconductor lasers (ECSLs) and recently developed TFLN photonics. The following section presents various ECSLs based on TFLN photonic chips with different photonic structures to construct external cavity for on-chip optical feedback. Some conclusions and future perspectives are provided.

