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Updated: Jun 11, 2025

Methods of Ex Situ and In Situ Investigations of Structural Transformations: The Case of Crystallization of Metallic Glasses
Published on: June 7, 2018
Multivariate growth analysis on D019-phase Mn3Ga kagome-based topological antiferromagnets
Wei-Chih Chang1, Anqi Cheng1, Yangjun Gao1
1Department of Physics, Engineering Research Center for Micro-Nano Optoelectronic Materials and Devices at Education Ministry, Fujian Provincial Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, People's Republic of China.
Abstract:
The combination of antiferromagnetism and topological properties in Mn3X (X = Sn,Ge,Ga) offers a unique platform to explore novel spin-dependent phenomena and develop innovative spintronic devices. Here, we have systematically investigated the phase transition of Mn3Ga thin films on SiO2(001)/Si substrates under various growth parameters such as seeding layer structure, annealing conditions, and film thickness. The relatively thick Mn3Ga films grown with Ru seeding exhibit a variety of polycrystalline hexagonal phases, including (002), and (201). The addition of a Ta layer to the conventional Ru seeding layer promotes the formation of nearly single-crystal antiferromagnetic (AF) Mn3Ga(002) phase from the relatively thin Mn3Ga films after annealing at 773 K. The investigation of the growth mechanism of Mn3Ga polycrystalline thin films provides a reference strategy for exploring Mn-based AF spintronic devices.
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