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Related Experiment Video

Updated: Jun 11, 2025

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
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Engineering Topological Spin Hall Effect in 2D Multiferroic Material.

Kaiying Dou1, Zhonglin He1, Jiangyu Zhao1

  • 1School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Shandanan Str. 27, Jinan, 250100, P. R. China.

Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|October 1, 2024
PubMed
Summary
This summary is machine-generated.

Researchers engineered the topological spin Hall effect (TSHE) for spintronics. They achieved ferroelectric control of TSHE by coupling antiferromagnetic topological charge and Dzyaloshinskii-Moriya interaction chirality in 2D multiferroics.

Keywords:
2D multiferroic materialantiferromagnetic bimeronferroelectricityfirst‐principlestopological spin Hall effect

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Area of Science:

  • Condensed matter physics
  • Spintronics
  • Materials science

Background:

  • The topological spin Hall effect (TSHE) arises from the interplay of spin-momentum locking and real-space topology.
  • Intrinsic robustness of TSHE hinders its practical application in spintronics.
  • Controllable manipulation of TSHE properties remains a significant challenge.

Purpose of the Study:

  • To develop a method for controllable and reversible engineering of TSHE characteristics.
  • To establish a link between ferroelectric properties and TSHE in magnetic materials.
  • To explore the potential of TSHE in next-generation spintronic devices.

Main Methods:

  • Symmetry and model analysis to understand the underlying physics.
  • First-principles calculations to simulate material properties.
  • Atomic spin model simulations to validate the proposed mechanism.

Main Results:

  • Demonstrated ferroelectric control of TSHE through coupling with Dzyaloshinskii-Moriya interaction chirality in antiferromagnetic bimerons.
  • Identified antiferromagnetic topological charge and Lorentz forces as key interacting elements.
  • Validated the mechanism in experimentally feasible multiferroic monolayer CuCr2Se4.

Conclusions:

  • The study presents a novel approach for controlling TSHE via ferroelectric switching.
  • This work bridges the gap between fundamental TSHE research and spintronic applications.
  • It opens new avenues for designing advanced spintronic devices utilizing multiferroic materials.