Unraveling the Spin-to-Charge Current Conversion Mechanism and Charge Transfer Dynamics at the Interface of

Rafael O Cunha1, Yunier Garcia-Basabe2, Dunieskys G Larrude3

  • 1Departamento de Física, Universidade Federal de Viçosa, Viçosa 36570-900, Minas Gerais, Brazil.

PubMed

Related Concept Videos

Carrier Transport01:21

Carrier Transport

The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
412
Charging Conductors By Induction01:15

Charging Conductors By Induction

The Earth is a good conductor of electricity, and it is so big that it can be considered an infinite source or sink of charges. It can easily exchange charges with any matter.
Generally, conductors like metals do not allow any excess charge to be present on them. Any excess charge added to metals easily flows away, for example, when a metal is placed on the Earth. This process is called earthing.
However, conductors can be charged by a process called induction. For example, consider charging a...
7.6K
Charge and Current01:14

Charge and Current

Electric charge is the most fundamental quantity in an electric circuit. The effects of electric charge are encountered daily, such as when a wool sweater sticks to the human body or when a person receives a shock while walking on a carpet.
Charge is an inherent property of the atomic particles that make up matter and is measured in units called coulombs (C). Matter is composed of atoms, each consisting of electrons, protons, and neutrons. Electrons have a negative charge (-e), while protons...
2.2K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
307
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
220
Continuous Charge Distributions01:17

Continuous Charge Distributions

Imagine a bucket of water. It contains many molecules, of the order of 1026 molecules. Thus, although it contains discrete elements (molecules) at the microscopic level, macroscopically, it can be considered continuous. Small volume elements of water, infinitesimal compared to the bulk of the bucket's volume, still contain many molecules. Under this framework, quantized matter is approximated as continuous for practical purposes.
The electric charge can also be subjected to an analogical...
6.8K