Search research articles

Related Concept Videos

Metallic Solids

Metallic Solids

Metallic solids such as crystals of copper, aluminum, and iron are formed by metal atoms. The structure of metallic crystals is often described as a uniform distribution of atomic nuclei within a “sea” of delocalized electrons. The atoms within such a metallic solid are held together by a unique force known as metallic bonding that gives rise to many useful and varied bulk properties.
All metallic solids exhibit high thermal and electrical conductivity, metallic luster, and malleability....

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Polycrystalline κ-Ga<sub>2</sub>O<sub>3</sub> on Si(100) substrates with GZO buffer layers.

RSC advances·2026

Same author

Growth of α-Ga<sub>2</sub>O<sub>3</sub> from Gallium Acetylacetonate under HCl Support by Mist Chemical Vapor Deposition.

Nanomaterials (Basel, Switzerland)·2024

Same author

The effects of oxygen flow ratio on the properties of Ag <sub></sub> O thin films grown by radio frequency magnetron sputtering.

RSC advances·2024

Same author

Characterization and study of high conductivity antimony-doped tin oxide thin films grown by mist chemical vapor deposition.

RSC advances·2023

Same author

Characterization and analytical development for amphiphilic poly(γ-glutamic acid) as raw material of nanoparticle adjuvants.

Journal of pharmaceutical and biomedical analysis·2018

Same author

Atmospheric and Aqueous Deposition of Polycrystalline Metal Oxides Using Mist-CVD for Highly Efficient Inverted Polymer Solar Cells.

Nano letters·2015

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Search research articles

Related Experiment Video

Updated: Jun 11, 2025

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures

Published on: February 8, 2018

Analysis of dislocation defects in compositionally step-graded α-(Al Ga_1- )₂O₃ layers.

Tatsuya Yasuoka¹, Hiromu Susami¹, Li Liu^1,2

¹School of Systems Engineering, Kochi University of Technology 185 Miyanokuchi, Tosayamada, Kami Kochi 782-8502 Japan.

|October 7, 2024

Summary

This study reduces dislocation defects in alpha-gallium oxide films by using step-graded aluminum gallium oxide layers. This method bends dislocations, significantly lowering their density in wide bandgap semiconductor materials.

More Related Videos

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

Related Experiment Videos

Last Updated: Jun 11, 2025

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures

Published on: February 8, 2018

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

Area of Science:

Materials Science
Semiconductor Physics
Crystal Growth

Background:

Alpha-gallium oxide (α-Ga2O3) is an ultra-wide bandgap semiconductor with potential for power electronics.
Heteroepitaxial growth of α-Ga2O3 on sapphire substrates leads to significant dislocation defects due to lattice mismatch.
Reducing dislocation density is crucial for improving the performance of α-Ga2O3-based devices.

Purpose of the Study:

To develop a method for reducing dislocation density in α-Ga2O3 films grown on sapphire.
To investigate the effectiveness of compositionally step-graded α-(AlxGa1-x)2O3 layers in mitigating defects.
To explore the impact of introducing α-Ga2O3 layers within the graded structure.

Main Methods:

Fabrication of compositionally step-graded α-(AlxGa1-x)2O3 layers using mist Chemical Vapor Deposition (CVD).
Utilizing c-plane sapphire substrates for heteroepitaxial growth.
Transmission Electron Microscopy (TEM) for defect analysis.

Main Results:

Initial α-(Al0.96Ga0.04)2O3 layers showed few dislocations, while subsequent α-(Al0.84Ga0.16)2O3 layers had numerous dislocations.
Step-graded layers induced dislocation bending under strain, reducing dislocation density by approximately 50% in higher Ga-content layers.
Inserting multiple α-Ga2O3 layers into the graded structure further reduced dislocation defects at interfaces.

Conclusions:

Compositionally graded layers effectively bend dislocations, mitigating defect propagation in α-Ga2O3 films.
The strain induced by compositional variations is key to reducing dislocation density.
Further optimization of layer composition, thickness, and stacking is expected to yield even lower dislocation densities.