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Updated: Jun 11, 2025

Real-Time DC-dynamic Biasing Method for Switching Time Improvement in Severely Underdamped Fringing-field Electrostatic MEMS Actuators
Published on: August 15, 2014
RF NEMS switches based on graphene for low pull-in voltage and excellent RF performance
Laifang Zheng1, Junsheng Zhang2, Huajie Wang2
1Department of Electronic Engineering, Taiyuan Institute of Technology, Taiyuan, 030008, China. zhenglf@tit.edu.cn.
Abstract:
This study introduces a novel graphene RF NEMS capacitive switch and conducts an extensive analysis of its RF performance using CST and COMSOL Multiphysics software. The switch's characteristic impedance matching is accomplished through a coplanar waveguide (CPW) structure, incorporating a dielectric layer topped with conductive graphene beam electrodes. Simulation results reveal that the monolayer graphene RF NEMS switch maintains an insertion loss of 0.003 ~ 0.015 dB and an isolation greater than 40 dB across an ultra-wideband (UWB) frequency range of DC ~ 140 GHz. Moreover, the switch demonstrates a switching time of 4.03 ps at a pull-in voltage of 1 V. The performance of multilayer graphene RF NEMS switches was also evaluated. The study further investigates the operational mechanism of the graphene RF NEMS switch and performs finite element analysis on the proposed design. The graphene RF NEMS switch discussed herein offers significant advantages, including minimal size, lightweight, cost-effectiveness, low pull-in voltage, rapid response time, excellent RF performance, and reduced space consumption in circuitry. Its potential applications span a range from L to F bands, encompassing data storage, communication systems, sensors, remote sensing and military uses.
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