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Updated: Jun 11, 2025

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Effects of resonant-laser excitation on the emission properties in a single quantum dot
1Joint Quantum Institute, National Institute of Standards and Technology and University of Maryland, College Park, Maryland 20742, USA.
Abstract:
While many solid-state emitters can be optically excited non-resonantly, resonant excitation is necessary for many quantum information protocols as it often maximizes the non-classicality of the emitted light. Here, we study the resonance fluorescence in a solid-state system-a quantum dot-with the addition of weak, non-resonant light. In the inelastic scattering regime, changes in the resonance fluorescence intensity and linewidth are linked to both the non-resonant and resonant laser powers. Details of the intensity change indicate that charge-carrier loss from the quantum dot is resonant laser. As we enter the Mollow triplet regime, this resonant laser loss term rate is approximately 1∕50 ns-1. This work further clarifies resonance fluorescence in solid-state systems and will aid in the further improvement of solid-state non-classical light sources.
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