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Updated: Jun 11, 2025

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Published on: August 2, 2019
Development of a Topological-Insulator-Based Quantum Resistance Standard
Ngoc Thanh Mai Tran1,2, Linsey K Rodenbach3, Jason M Underwood1
1National Institute of Standards and Technology (NIST), Gaithersburg, MD 20899, USA.
Abstract:
This paper describes the characterization of the quantum anomalous Hall (QAH) effect resistor with Chromium-doped Bismuth Antimony Telluride with the efforts in coupling directly to a programmable Josephson voltage standard (PJVS) at zero magnetic field. The precision measurement of the QAH resistance was performed under the presence of microwave signal biased to the PJVS. Understanding such effect will help to improve the experimental set-up for integrating multiple quantum electrical standards in a single system.
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