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Near-Infrared Polarization-Sensitive Detection by All-Si Plasmonic Hot Electron Detectors.

Shuoqiu Tian1,2, Wentao Yuan1,2, Yu Yu3

  • 1Nanolithography and Application Research Group, School of Information Science and Technology, Fudan University, Shanghai 200433, China.

Nano Letters
|October 9, 2024
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Summary

This study presents an all-silicon near-infrared detector for polarization-sensitive optoelectronic detection. It utilizes plasmon hot electron generation and an optimized anisotropic metasurface for high performance.

Keywords:
Au antenna/Si nanowire metasurfaceplasmonic hot electron photodetectorpolarization photocurrent ratiopolarization-sensitive detectionshort infrared wavelength

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Area of Science:

  • Optoelectronics
  • Materials Science
  • Plasmonics

Background:

  • Polarization-sensitive detection is crucial for various optical applications.
  • Existing detectors often face limitations in sensitivity and spectral range.
  • Silicon-based devices offer potential for cost-effective and integrated solutions.

Purpose of the Study:

  • To develop a polarization-sensitive optoelectronic detector using silicon in the near-infrared (NIR) range.
  • To enhance internal quantum efficiency (IQE) through advanced device architecture and metasurface design.
  • To investigate the tunability of optoelectronic response via external bias.

Main Methods:

  • Utilized plasmon hot electron generation and internal photoemission effect.
  • Designed and structurally optimized an anisotropic metasurface.
  • Employed finite difference time domain (FDTD) simulations for device optimization.
  • Conducted optoelectronic measurements to characterize device performance.
  • Developed a theoretical model for IQE estimation.

Main Results:

  • Achieved maximum optical absorption of 80% at 1.45 μm with an optical discrimination ratio of 120.
  • Demonstrated peak responsivity of 51.2 mA/W and detectivity of 8.05 × 10^10 cm Hz^1/2/W at 1.45 μm.
  • Obtained a high polarization photocurrent ratio of 35 nm at 1.55 μm.
  • Showcased tunable optoelectronic response with a back-gate bias.

Conclusions:

  • Successfully demonstrated a polarization-sensitive all-Si detector in the NIR range.
  • The optimized anisotropic metasurface significantly enhances IQE and device performance.
  • The developed theoretical model provides a pathway for future improvements in hot electron detector technology.