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Updated: Jun 10, 2025

Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters
Published on: July 8, 2013
Quantifying the ultimate limit of plasmonic near-field enhancement
Zhengyi Lu1, Jiamin Ji1, Haiming Ye1
1Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, China.
Abstract:
Quantitatively probing the ultimate limit of near-field enhancement around plasmonic nanostructures remains elusive, despite more than five decades since the discovery of surface-enhanced Raman scattering. Theoretical calculations have predicted an ultimate near-field enhancement exceeding 1000 using the best plasmonic material silver, but experimental estimations disperse by orders of magnitude. Here, we design a high-quality silver plasmonic nanocavity with atomic precision and precisely quantify the upper limit of near-field enhancement in ~1 nm junctions. A hot-spot averaged Raman enhancement of 4.27 × 1010 is recorded with a small fluctuation, corresponding to an averaged electric field enhancement larger than 1000 times. This result quantitatively delineates the ultimate limit of plasmonic field enhancement around plasmonic nanostructures, establishing a foundation for diverse plasmon-enhanced processes and strong light-matter interactions at the atomic scale.

