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¹H NMR: Long-Range Coupling

¹H NMR: Long-Range Coupling

The coupling interactions of nuclei across four or more bonds are usually weak, with J values less than 1 Hz. While these are usually not observed in spectra, the presence of multiple bonds along the coupling pathway can result in observable long-range coupling.
In alkenes, spin information is communicated via σ–π overlap, as seen in allylic (four-bond) and homoallylic (five-bond) couplings. These coupling interactions are stronger when the σ bond is parallel to the alkene...

Spin–Spin Coupling: Two-Bond Coupling (Geminal Coupling)

Spin–Spin Coupling: Two-Bond Coupling (Geminal Coupling)

Two NMR-active nuclei bonded to a central atom can be involved in geminal or two-bond coupling. Geminal coupling is commonly seen between diastereotopic protons in chiral molecules and unsymmetrical alkenes, among others.
The central atom need not be NMR-active because its electrons are affected by the electron polarization of the spin-active atoms. However, spin information is transmitted less effectively than in one-bond coupling, and 2J values are usually weaker than 1J values. The energy of...

¹H NMR: Interpreting Distorted and Overlapping Signals

¹H NMR: Interpreting Distorted and Overlapping Signals

Spin systems where the difference in chemical shifts of the coupled nuclei is greater than ten times J are called first-order spin systems. These nuclei are weakly coupled, and their chemical shifts and coupling constant can generally be estimated from the well-separated signals in the spectrum.
As Δν decreases and the signals move closer, the doublets appear increasingly distorted. The intensities of the inner lines increase at the cost of those of the outer lines as the signals are...

Biasing of Metal-Semiconductor Junctions

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

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Published on: June 3, 2015

Highly Tunable 2D Silicon Quantum Dot Array with Coupling beyond Nearest Neighbors.

Ning Wang^1,2, Jia-Min Kang^1,2, Wen-Long Lu^1,2

¹CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei, Anhui 230026, China.

|October 14, 2024

Summary

Researchers developed a controllable 2D silicon quantum dot array for quantum computing. This array offers tunable couplings between quantum dots, crucial for advancing semiconductor quantum computation and simulation platforms.

Keywords:

2D silicon quantum dot arrays next-nearest-neighbor coupling tunable tunnel coupling variable coupling configuration

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Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

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Area of Science:

Quantum Information Science
Condensed Matter Physics
Materials Science

Background:

Scaling quantum dots to 2D arrays is vital for quantum computation.
Maintaining tunability of couplings (nearest-neighbor and next-nearest-neighbor) in 2D silicon quantum dots is challenging due to small size.

Purpose of the Study:

To present a highly controllable 2D quantum dot array in planar silicon.
To demonstrate independent control over electron fillings and tunnel couplings.
To show wide tunability of next-nearest-neighbor couplings in 2D arrays.

Main Methods:

Fabrication of a planar silicon 2D quantum dot array.
Demonstration of independent control over electron occupation (filling).
Characterization of tunable tunnel couplings, including nearest-neighbor and next-nearest-neighbor interactions.

Main Results:

Achieved a highly controllable and interconnected 2D quantum dot array in silicon.
Demonstrated independent control over electron fillings and nearest-neighbor dot couplings.
Showcased wide tunability of next-nearest-neighbor couplings, essential for 2D array functionality.

Conclusions:

The developed silicon 2D quantum dot array offers excellent tunability for coupling configurations.
This platform is versatile for advancing quantum computing and quantum simulation.
Enables flexible manipulation of coupling strengths for tailored quantum operations.