High-Performance Planar Broadband Hot-Electron Photodetection through Platinum-Dielectric Triple Junctions

Recently, planar and broadband hot-electron photodetectors (HE PDs) were established but exhibited degraded performances due to the adoptions of the single-junction configurations and the utilizations of absorbable films with thicknesses larger than the electronic mean free path. In this work, we present a five-layer design for planar HE PDs assisted by triple junctions in which an ultrathin Pt layer dominates the broadband and displays strong optical absorption (>0.9 from 900 nm to 1700 nm). Optical studies reveal that the optical admittance matching between optical admittances of designed device and air at all interested wavelengths is responsible for broadband light-trapping that induces prominent energy depositions in Pt layers. Electrical investigations show that, benefitting from suppressed hot-electron transport losses and increased hot-electron harvesting junctions, the predicted responsivity of the designed HE PD is up to 8.51 mA/W at 900 nm. Moreover, the high average absorption (responsivity) of 0.96 (3.66 mA/W) is substantially sustained over a broad incidence angle regardless of the polarizations of incident light. The comparison studies between five-layer and three-layer devices emphasize the superiority of five-layer design in strong optical absorption in Pt layers and efficient hot-electron extraction.