Bandgap Engineering via Doping Strategies for Narrowing the Bandgap below 1.2 eV in Sn/Pb Binary Perovskites:...

The integration of perovskite materials in solar cells has garnered significant attention due to their exceptional photovoltaic properties. However, achieving a bandgap energy below 1.2 eV remains challenging, particularly for applications requiring infrared absorption, such as sub-cells in tandem solar cells and single-junction perovskite solar cells. In this study, we employed a doping strategy to engineer the bandgap and observed that the doping effects varied depending on the A-site cation. Specifically, we investigated the impact of bismuth (Bi³⁺) incorporation into perovskites with different A-site cations, such as cesium (Cs) and methylammonium (MA). Remarkably, Bi³⁺ doping in MA-based tin-lead perovskites enabled the fabrication of ultra-narrow bandgap films (~1 eV). Comprehensive characterization, including structural, optical, and electronic analyses, was conducted to elucidate the effects of Bi doping. Notably, 8% Bi-doped Sn-Pb perovskites demonstrated infrared absorption extending up to 1360 nm, an unprecedented range for ABX₃-type single halide perovskites. This work provides valuable insights into further narrowing the bandgap of halide perovskite materials, which is essential for their effective use in multi-junction tandem solar cell architectures.