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Updated: Jun 10, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Enhancing the Resistive Switching Properties of Transparent HfO2-Based Memristor Devices for Reliable Gasistor

Taegi Kim1, Doowon Lee2, Myoungsu Chae3

  • 1Department of Semiconductor Systems Engineering, Convergence Engineering for Intelligent Drone, Institute of Semiconductor and System IC, Sejong University, 209, Neungdong-ro, Gwangjin-gu, Seoul 05006, Republic of Korea.

Sensors (Basel, Switzerland)
|October 16, 2024
PubMed

Keywords:
gasistor applicationresistive switchingroughness of BEtransparent memristor

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