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An Ultrasensitive and Broad-Spectrum MoS2 Photodetector with Extrinsic Response Using Surrounding Homojunction.

Xiaoyan Liu1,2,3, Jiaqi Zhu1, Yufeng Shan1

  • 1School of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, Zhejiang, 310024, China.

Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|October 16, 2024
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Summary

Engineered a novel molybdenum disulfide (MoS2) photodetector with a p-n homojunction for enhanced optoelectronic applications. This device achieves high sensitivity across a broad spectrum, including visible and short-wave infrared light.

Keywords:
MoS2N2 plasma implantationbroad‐spectrum photodetectorsextrinsic responsesurrounding homojunctions

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Area of Science:

  • Optoelectronics
  • Materials Science
  • Nanotechnology

Background:

  • 2D semiconducting transition metal dichalcogenides are crucial for optoelectronics.
  • Existing MoS2 photodetectors have limited spectral response and sensitivity, primarily in visible light.
  • There is a need for broadband photodetectors with high sensitivity.

Purpose of the Study:

  • To engineer a MoS2 photodetector with improved spectral response and sensitivity.
  • To create a broadband photodetector utilizing a p-n homojunction in MoS2.
  • To demonstrate the potential for next-generation imaging systems and photonic chips.

Main Methods:

  • Fabrication of a MoS2 photodetector with a surrounding homojunction.
  • Localized p-type nitrogen plasma doping on n-type MoS2.
  • Preservation of a high-mobility underlying channel for carrier transport.

Main Results:

  • Achieved high photoresponsivity (6.94 × 104 A W-1) and specific detectivity (1.21 × 1014 Jones) at 638 nm.
  • Demonstrated an optimal light on/off ratio of ≈107.
  • Exhibited broadband response to short-wave infrared (34 A W-1, 5.92 × 1010 Jones at 1550 nm) due to nitrogen doping.

Conclusions:

  • The engineered p-n homojunction MoS2 photodetector significantly enhances intrinsic detection performance.
  • Nitrogen doping enables extrinsic broadband response, extending detection into the short-wave infrared spectrum.
  • The device shows promise for multifunctional imaging and high-performance photonic integrated circuits.