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Two-Dimensional MoS₂-Based Anisotropic Synaptic Transistor for Neuromorphic Computing by Localized Electron Beam

Lei Liu^1,2, Peng Gao^1,2, Mengru Zhang^1,2

¹State Key Laboratory of Integrated Chip and System, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China.

Advanced Science (Weinheim, Baden-Wurttemberg, Germany)

|October 16, 2024

Summary

Researchers developed anisotropic artificial synapses using localized doping on isotropic materials. This breakthrough enables advanced neuromorphic computing and sensing systems, overcoming limitations of current anisotropic materials.

Keywords:

anisotropic synapse colored‐digit recognition connection heterogeneity electron beam irradiation localized doping multiterminal transistor neuromorphic computing

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Area of Science:

Materials Science
Computer Engineering
Neuroscience

Background:

Neuromorphic computing addresses the von Neumann bottleneck for advanced computing.
Artificial synapses mimic biological systems for complex tasks.
Current anisotropic materials for synapses have limited variety and adjustable conductivity.

Purpose of the Study:

To create anisotropic artificial synapses on isotropic materials.
To overcome limitations of existing anisotropic synapse materials.
To demonstrate the potential for next-generation computing and sensing.

Main Methods:

Localized doping of isotropic materials using electron beam irradiation (EBI).
Purposeful induction of trap sites within the material.
Construction of artificial neural networks (ANNs) using the fabricated synapses.

Main Results:

Achieved anisotropic artificial synapses on isotropic materials.
Demonstrated variable neuromorphic task accomplishment with optimized performance.
Expanded the family of axon-multisynapse devices.

Conclusions:

Localized doping offers a novel approach to creating advanced artificial synapses.
This method holds significant potential for future neuromorphic computing and sensing systems.
The technique overcomes limitations of traditional anisotropic materials.