Frustrated van der Waals heterostructures
Related Experiment Video
Updated: Jun 10, 2025

Fabricating van der Waals Heterostructures with Precise Rotational Alignment
Published on: July 5, 2019
1Applied Artificial Intelligence Institute, Deakin University, Geelong, Victoria 3216, Australia. abbas@deakin.edu.au.
Abstract:
Geometrical frustration results from the packing of constituents in a lattice, where the constituents have conflicting forces. The phenomenon is known in glass materials, and this work expands the concept of geometrical frustration into the realm of van der Waals two-dimensional materials. Using density functional theory with the r2SCAN + rVV10 exchange-correlation potential, we find a number of two-dimensional heterostructures with alternating strains, where one layer is strained and the adjacent layer is compressed. We adopted three structural stability criteria to find synthesisable candidate materials: phonon dispersion of the individual layers, comparing the thermodynamic stability of this class of materials, frustrated van der Waals heterostructures, with the non-frustrated counterparts, and ab initio molecular dynamics simulations. These criteria were applied to 7 frustrated van der Waals heterostructures, identifying one material that is potentially stable. We discuss possible fabrication pathways for creating this class of materials.
More Related Videos
Related Concept Videos
Van der Waals Interactions
Van der Waals Equation
First, the attractive forces between molecules, which are stronger at higher densities and reduce the pressure, are considered by adding to the pressure a term equal to the square of the molar density multiplied by a positive coefficient a. Second, the volume...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Valence Bond Theory
Hybridization of Atomic Orbitals I
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

