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Electron surface scattering kernel for a plasma facing a semiconductor.

F X Bronold1, F Willert1

  • 1Institut für Physik, <a href="https://ror.org/00r1edq15">Universität Greifswald</a>, 17489 Greifswald, Germany.

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|October 19, 2024
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Summary
This summary is machine-generated.

Researchers developed a new electron surface scattering kernel for plasma-solid interactions. This model accurately predicts electron emission from silicon and germanium surfaces, crucial for plasma-facing electronic devices.

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Area of Science:

  • Plasma Physics
  • Materials Science
  • Computational Physics

Background:

  • Accurate modeling of plasma-surface interactions is essential for fusion energy and semiconductor manufacturing.
  • Existing models often simplify electron emission and backscattering at the plasma-solid interface.
  • Understanding electron behavior is critical for controlling plasma-material interactions.

Purpose of the Study:

  • To develop a robust electron surface scattering kernel for the Boltzmann equation.
  • To incorporate microphysical details of electron emission and backscattering from semiconductor surfaces.
  • To validate the model for plasma-facing silicon and germanium.

Main Methods:

  • Utilized the invariant embedding principle for the electron backscattering function.
  • Developed a scheme for an electron surface scattering kernel applicable to metals and dielectrics.
  • Modeled the interface potential using a Schottky barrier for silicon and germanium.
  • Included impact ionization and scattering on phonons and ion cores.

Main Results:

  • The proposed scheme constructs an electron surface scattering kernel for plasma-solid boundary conditions.
  • The model accounts for semiconductor microphysics, including electron emission and backscattering.
  • Calculated emission yields for silicon and germanium showed good agreement with experimental data.

Conclusions:

  • The developed electron surface scattering kernel is suitable for boundary conditions in plasma-solid simulations.
  • The model's accuracy for silicon and germanium supports its application in related technologies.
  • This work advances the understanding and simulation of electron transport at plasma-material interfaces.