Recent progress of Ga₂O₃ materials and devices based on the low-cost, vacuum-free Mist-CVD epitaxial growth method

Compared with silicon, gallium nitride, silicon carbide, and other traditional semiconductors, gallium oxide (Ga₂O₃) who possesses, an ultrawide bandgap of approximately 5.0 eV and a higher breakdown field strength of approximately 8 MV/cm has attracted increasing attention from researchers, especially for the potential application in power devices. Moreover, Ga₂O₃ material has natural ultraviolet detection ability for photodetectors due to its ultrawide bandgap. These future commercial applications put forward an urgent require for high-quality epitaxial Ga₂O₃ material in an efficient growth method at a lower cost. Although there are some conventional methods for single crystal Ga₂O₃ film epitaxial growth such as MBE and MOCVD, these methods always need a vacuum growth environment and expensive equipment. As a fast-growing method, Mist-CVD gives the growth of Ga₂O₃ in a vacuum-free, process-simple, and low-cost method, which will greatly reduce the cost and facilitate the development of Ga₂O₃. This review has summarizes the Mist-CVD epitaxy growth mechanism of Ga₂O₃, recent progress in the Ga₂O₃ film epitaxial growth, and various device properties based on the Mist-CVD method. Our work aims to provide help for the development of Ga₂O₃ material growth and device applications.