Related Experiment Video
Updated: Jul 24, 2026

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
MoS2 Decorated on 1D MoS2@Co/NC@CF Hierarchical Fibrous Membranes for Enhanced Microwave Absorption
Linlong Xing1, Haoran Cheng1, Yang Li1,2
1State Key Laboratory of Structural Analysis, Optimization and CAE Software for Industrial Equipment, National Engineering Research Center for Advanced Polymer Processing Technology, Zhengzhou University, Zhengzhou, 450002, P. R. China.
Abstract:
The design and development of high-quality electromagnetic waves (EMW) absorbing materials play a vital role in combating the escalating negative effects of microwave radiation and interference. Herein, MoS2@Co/NC@CF fibrous membranes are successfully fabricated by electrospinning technology and carbonization, and a molybdenum disulfide (MoS2) layer is synthesized on the surface of these fibers via hydrothermal method. The seed-assisted growth method not only effectively avoids the accumulation and improves the loading of ZIF-67 particles, so as to ensure that the magnetic components in the fibers are evenly distributed in a wider range, rather than only intermittently present in some sites. Meanwhile, the introduction of semiconductor MoS2 as the shell further optimizes the impedance matching and improves the EMW absorption performance of the carbon fibrous membranes: the minimum reflection loss (RLmin) is -67.56 dB, and the maximum effective absorption bandwidth (EABmax) is further expanded to 6.56 GHz (2.1 mm, 11.44-18 GHz). This work provides a feasible method for developing high-efficient EMW-absorbing materials.
More Related Videos
09:20Microhoneycomb Monoliths Prepared by the Unidirectional Freeze-drying of Cellulose Nanofiber Based Sols: Method and Extensions
Published on: May 24, 2018
06:00Solvothermal Synthesis of MIL-96 and UiO-66-NH2 on Atomic Layer Deposited Metal Oxide Coatings on Fiber Mats
Published on: June 13, 2018
Related Concept Videos
MOSFET
In an n-MOSFET, the structure includes n-type source and drain...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
MOSFET: Depletion Mode
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity arises...