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Diode and Selective Routing Functionalities Controlled by Geometry in Current-Induced Spin-Orbit Torque Driven
Elena M Şteţco1,2, Traian Petrişor1, Ovidiu A Pop2
1Centre for Superconductivity, Spintronics and Surface Science, Physics and Chemistry Department, Technical University of Cluj-Napoca, Str. Memorandumului, 400114 Cluj-Napoca, Romania.
Nano Letters
|October 27, 2024
Summary
Researchers controlled domain wall motion in magnetic devices by angling the current path. This creates a domain wall diode and selector, enabling new memory and computing technologies.
Area of Science:
- Spintronics
- Condensed Matter Physics
Background:
- Current-induced domain wall (DW) motion in heavy metal/ferromagnet heterostructures is key for next-generation memory and computing.
- Understanding and controlling DW dynamics is essential for device applications.
Purpose of the Study:
- To investigate the effect of angled domain wall conduits on current-induced DW motion.
- To demonstrate novel device functionalities like domain wall diodes and selectors.
Main Methods:
- Fabrication of heavy metal/ferromagnet structures with specifically designed DW conduits.
- Electrical transport measurements to observe and analyze DW motion under varying current directions and conduit geometries.
- Utilizing the interfacial Dzyaloshinskii-Moriya interaction (iDMI) to tune DW behavior.
Main Results:
- An angled (45°) conduit section induces asymmetric DW motion, impeding or blocking one polarity while allowing free passage for the other.
- This asymmetry enables the creation of a functional domain wall diode.
- A Y-shaped conduit with branches at +45° and -45° acts as a domain wall selector, routing DWs based on their polarity.
Conclusions:
- Adjusting the angle between the DW conduit and current direction offers a new control parameter for current-induced DW motion.
- The demonstrated DW diode and selector functionalities pave the way for advanced spintronic devices.
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