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Published on: December 5, 2015
Improvement of N-type carbon nanotube field effect transistor performance using the combination of yttrium diffusion
Zhenfei Hou1, Gang Niu1,2, Jie Li1
1Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic Science and Engineering, Faculty of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China.
Abstract:
In this paper, we obtained n-type top-gate carbon nanotube (CNT) thin film field effect transistors (FET) with source/drain extensions structure through dielectrics optimization strategy, combining the yttrium layer with HfO2dielectric argon annealing process, and metal contacts. The mechanism for enhanced n-type conduction was explained as being due to the vertical diffusion of yttrium to the HfO2dielectric during argon annealing. This diffusion causes a bending of the energy band, which results in more positive fixed charges, and a reduction in the electron injection barrier between the low work function source/drain Cr electrode and CNT thin film. The optimized technology has great prospects for the low cost, large scale and high performance n-type CNT thin film FET to be used in integrated electronic devices.
