A nonvolatile magnon field effect transistor at room temperature.

Jun Cheng1, Rui Yu1,2, Liang Sun1

  • 1National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, and Collaborative Innovation Center of Advanced Microstructures, Nanjing, 210093, PR China.

Nature Communications
|October 30, 2024
PubMed
Summary

Researchers developed a novel nonvolatile magnonic field effect transistor. This spin-based device operates at room temperature, offering a potential solution to the heat issues hindering the information industry.

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