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Pristine MXene: In Situ XRD Study of MAX Phase Etching with HCl+LiF Solution
Bartosz Gurzęda1, Nicolas Boulanger1, Andreas Nordenström1
1Department of Physics, Umeå University, Umeå, S-90187, Sweden.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|October 30, 2024
Summary
This study reports the first in situ X-ray diffraction of Ti3C2Tx (MXene) synthesis in HF solution. It reveals the structure of pristine MXene and explains the slow kinetics of MXene formation.
Area of Science:
- Materials Science
- Nanotechnology
- Chemistry
Background:
- Ti3C2Tx (MXene) synthesis is of great interest for various applications.
- Current synthesis studies are limited to ex situ methods due to challenges with hydrofluoric acid (HF) solutions.
Purpose of the Study:
- To perform the first time-resolved in situ synchrotron radiation X-ray Diffraction (XRD) study of MXene synthesis directly in HF solution.
- To investigate the structure of "pristine MXene" formed during the etching process.
Main Methods:
- Utilized a plastic capillary-size reaction cell for in situ measurements directly within HF solution.
- Employed synchrotron radiation X-ray Diffraction (XRD) for time-resolved structural analysis.
- Compared interlayer distances of pristine MXene, Li-intercalated MXene, and Li-free MXene.
Main Results:
- Reported the structure of "pristine MXene" formed by etching Ti3AlC2 with LiF+HCl.
- Determined the interlayer distances: pristine MXene (≈13.5 Å), Li-intercalated MXene (≈12.2 Å), and Li-free MXene (≈10.7 Å).
- Concluded that the "slit pore" width formed during Al etching is approximately 3 Å, explaining the slow kinetics of MXene formation.
Conclusions:
- The ≈3 Å slit pore width is critical for HF etching of Al within Ti3AlC2 interlayers.
- The observed space constraint explains the slow kinetics of MXene formation in HF-based methods.
- Crystalline MXene phase formation occurs via simultaneous Al etching and Ti3C2 layer termination, with no intermediate phases observed.

