Related Experiment Video
Updated: Aug 2, 2026
08:21
Laser-induced Forward Transfer for Flip-chip Packaging of Single Dies
Published on: March 20, 2015
12.3K
Wafer-scale vertical injection III-nitride deep-ultraviolet light emitters
Jiaming Wang1, Chen Ji1, Jing Lang1
1State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, China.
Nature Communications
|October 31, 2024
Summary
Researchers developed wafer-scale fabrication for deep-ultraviolet light emitters using a novel decoupling strategy. This enables scalable production of high-performance III-nitride devices for diverse applications.
Area of Science:
- Optoelectronics
- Materials Science
- Solid-state Physics
Background:
- III-nitride deep-ultraviolet (DUV) light emitters are crucial for various applications.
- Wafer-scale fabrication of DUV devices, especially in vertical injection configuration, faces challenges with strain management and substrate removal.
- Current methods often result in surface cracks and limited scalability.
Purpose of the Study:
- To demonstrate a roadmap for wafer-scale fabrication of III-nitride solid-state DUV light emitters.
- To address the tensile strain issue in Al-rich AlGaN on GaN structures.
- To enable the production of large-sized DUV devices without surface defects.
Main Methods:
- Development of an innovative decoupling strategy to separate the epitaxial device structure from the GaN template.
- Utilizing a GaN template instead of AlN for the epitaxial stack.
- Implementing a protection cushion against stress mutation during substrate removal (laser lift-off).
Main Results:
- Successful wafer-scale fabrication of 2- to 4-inch III-nitride DUV light emitters in vertical injection configuration.
- Achieved a light output power of 65.2 mW at 200 mA for 280 nm DUV LEDs.
- Demonstrated significant improvement in light extraction efficiency and device scalability.
Conclusions:
- The developed decoupling strategy effectively manages strain and prevents cracks in large-area DUV LED wafers.
- This work provides a scalable and high-performance solution for III-nitride DUV light emitter fabrication.
- The findings are expected to accelerate the application of advanced DUV solid-state light sources.
