Spin-Tunneling Magnetoresistive Effects in Bottom-Up-Grown Ni/Graphene/Ni Nanojunctions

Two-dimensional (2D) materials embedded in magnetic tunnel junctions (MTJs) provide a platform to increase the control over spin transport properties by the proximity spin-filtering effect. This could be harnessed to craft spintronic devices with low power consumption and high performance. We explore the spin transport in the 2D MTJs based on graphene, which is uniformly grown on Ni(111) substrates using the chemical vapor deposition technique. After the Ni thin film is deposited bottom-up on the well-grown Ni(111)/graphene surface in an e-beam evaporation system by the physical vapor deposition method, the Ni/graphene/Ni nanojunction array devices are successfully prepared by using nanography technology. Evidence of the emergence of tunneling magnetoresistance (TMR) effects with ultrasmall resistance × area products in graphene-based nanojunctions is observed by the exclusion of anisotropic magnetoresistance. The theoretical analysis shows that this TMR is mainly attributed to the strong spin-filtering effect at the perfect Ni(111)/graphene interface. Besides, earlier findings indicate that the TMR would be promoted more effectively if the short-circuit effect formed in the process of nanographic etching by an ion beam can be further eliminated. Overall, this study provides a path to harness the full potential of graphene-based MTJ array devices with a high efficiency and performance.