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Updated: Jun 8, 2025

Combining Solid-state and Solution-based Techniques: Synthesis and Reactivity of ChalcogenidoplumbatesII or IV
Published on: December 29, 2016
New three-dimensional flat band candidate materials Pb2As2O7 and Pb2Sn2O7
Izumi Hase1, Yoichi Higashi2, Hiroshi Eisaki2
1National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, 305-8568, Tsukuba, Japan. i.hase@aist.go.jp.
Abstract:
Energy dispersion of electrons is the most fundamental property of the solid state physics. In models of electrons on a lattice with strong geometric frustration, the band dispersion of electrons can disappear due to the quantum destructive interference of the wavefunction. This is called a flat band, and it is known to be the stage for the emergence of various fascinating physical properties. It is a challenging task to realize this flat band in a real material. In this study, we performed first-principles calculations on two compounds, Pb As O and Pb Sn O , which are candidates to have flat bands near the Fermi level. Both compounds have electronic states close to flat bands, but the band width is significantly larger than that of Pb Sb O shown in previous research. Nevertheless, the density of states at the Fermi level of Pb As O is large enough to cause the system to undergo a ferromagnetic transition. In the case of Pb Sn O , pseudo-gap behavior near the Fermi level was observed. These findings underscore the importance of investigating the influence of flat bands on electronic energy dispersion, providing a crucial step toward understanding the emergence and characteristics of flat bands in novel materials.
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